
Report ID: SQMIG45I2251
Skyquest Technology's expert advisors have carried out comprehensive research on the gallium nitride semiconductor devices market to identify the major global and regional market trends and growth opportunities for leading players and new entrants in this market. The analysis is based on in-depth primary and secondary research to understand the major market drivers and restraints shaping the future development and growth of the industry.
High Demand from Electric Vehicles
Surge in Demand for High-performance Electronics
Limited Availability of Substrates
Competition from Silicon-based Semiconductors
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Global Gallium Nitride Semiconductor Devices Market size was valued at USD 2.6 Billion in 2023 and is poised to grow from USD 3.29 Billion in 2024 to USD 21.41 Billion by 2032, growing at a CAGR of 26.4% during the forecast period (2025-2032).
Fujitsu Ltd.', 'Efficient Power Conversion Corporation', 'Transphorm, Inc', 'Osram Opto-Semiconductors', 'Infineon Technologies AG', 'NXP Semiconductors', 'Qorvo Inc.', 'Panasonic Corporation', 'Cree Inc.', 'Texas Instruments Incorporated', 'ROHM Company Ltd.', 'Toshiba Corporation', 'GaN Systems', 'NTT Advanced Technology Corporation'
Electric vehicles are gaining massive popularity on a global level as emphasis on emission reduction increases. Extensive use of gallium nitride semiconductor devices in these electric vehicle components such as power converters, inverters, and chargers is also expected to favor the global gallium nitride semiconductor devices market outlook in the long run.
Miniaturization of Power Electronics: Gallium nitride semiconductor device companies should focus on the power electronics miniaturization trend to create new business scope in the long run. High demand for compact and lightweight devices around the world is forecasted to bolster the sales of miniaturized gallium nitride semiconductor devices going forward. Substantial investments in R&D would be required to achieve the desired miniaturization.
North America is estimated to account for a sizeable share of the global gallium nitride semiconductor devices industry going forward. The presence of a developed technological infrastructure, high investments in semiconductor technology R&D, and growing demand for energy efficient electronics are slated to bolster the dominance of this region in the future. Increasing emphasis of organizations to commercialize novel GaN semiconductor technologies in this region are also expected to create new opportunities for market players over the coming years. The United States is projected to lead revenue generation followed by Canada. Efforts of governments in this region to improve their semiconductor manufacturing capacity to reduce reliance on imports from Asia is also expected to favor the sales of gallium nitride semiconductor devices.
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