RF Gallium Nitride Market

RF Gallium Nitride Market Size, Share, Growth Analysis, By Device Type(Introduction, Discrete RF Device, Integrated RF Device), By Wafer Size(Introduction, <200 mm, 200 and More), By End Use(Introduction, Telecom Infrastructure, Satellite Communication, Military and Defence), By Geography(Introduction, North America, Recession Impact, US) - Industry Forecast 2024-2031


Report ID: UCMIG45K2068 | Region: Global | Published Date: Upcoming |
Pages: 165 | Tables: 55 | Figures: 60

RF Gallium Nitride Market Insights

Market Overview:

The RF Gallium Nitride Market is anticipated to grow at a CAGR of 12.9% from 2022 to 2028, from an estimated value of USD 1.3 billion to USD 2.8 billion. One of the main drivers driving the demand for RF GaN devices is the increased adoption of 5G technology, as these devices are essential for 5G networks to provide the requisite coverage, data speeds, and spectral efficiency. The RF GaN market is expanding due to a variety of causes, including as the rising demand for faster data rates, improved network capacity, the deployment of tiny cells, and others.

RF Gallium Nitride Market, Forecast & Y-O-Y Growth Rate, 2020 - 2028
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This report is being written to illustrate the market opportunity by region and by segments, indicating opportunity areas for the vendors to tap upon. To estimate the opportunity, it was very important to understand the current market scenario and the way it will grow in future.

Production and consumption patterns are being carefully compared to forecast the market. Other factors considered to forecast the market are the growth of the adjacent market, revenue growth of the key market vendors, scenario-based analysis, and market segment growth.

The market size was determined by estimating the market through a top-down and bottom-up approach, which was further validated with industry interviews. Considering the nature of the market we derived the Electronic Components by segment aggregation, the contribution of the Electronic Components in Technology Hardware & Equipment and vendor share.

To determine the growth of the market factors such as drivers, trends, restraints, and opportunities were identified, and the impact of these factors was analyzed to determine the market growth. To understand the market growth in detail, we have analyzed the year-on-year growth of the market. Also, historic growth rates were compared to determine growth patterns.

Segmentation Analysis:

The RF Gallium Nitride Market is segmented by Device Type, Wafer Size, End Use, Geography. We are analyzing the market of these segments to identify which segment is the largest now and in the future, which segment has the highest growth rate, and the segment which offers the opportunity in the future.

RF Gallium Nitride Market Basis Point Share Analysis, 2021 Vs. 2028
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  • Based on Device Type the market is segmented as, Introduction, Discrete RF Device, Integrated RF Device
  • Based on Wafer Size the market is segmented as, Introduction, <200 mm, 200 and More
  • Based on End Use the market is segmented as, Introduction, Telecom Infrastructure, Satellite Communication, Military and Defence, Others
  • Based on Geography the market is segmented as, Introduction, North America, Recession Impact, US, Canada, Mexico, Europe, Recession Impact, Germany, UK, France, Rest of Europe, Asia Pacific, Recession Impact, China, Japan, South Korea, Rest of Asia Pacific, RoW, Recession Impact, Middle East & Africa, South America, KEY MARKET PLAYERS, Sumitomo Electric Device Innovations, Inc., Qorvo, Inc., WOLFSPEED, INC., NXP Semiconductors, MACOM, Infineon Technologies AG, ROHM Co., Ltd., Texas Instruments Incorporated, Toshiba Corporation

Regional Analysis:

RF Gallium Nitride Market is being analyzed by North America, Europe, Asia-Pacific (APAC), Latin America (LATAM), Middle East & Africa (MEA) regions. Key countries including the U.S., Canada, Germany, France, UK, Italy, Spain, China, India, Japan, Brazil, GCC Countries, and South Africa among others were analyzed considering various micro and macro trends.

RF Gallium Nitride Market Attractiveness Analysis, By Region 2020-2028
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RF Gallium Nitride Market : Risk Analysis

SkyQuest's expert analysts have conducted a risk analysis to understand the impact of external extremities on RF Gallium Nitride Market. We analyzed how geopolitical influence, natural disasters, climate change, legal scenario, economic impact, trade & economic policies, social & ethnic concerns, and demographic changes might affect RF Gallium Nitride Market's supply chain, distribution, and total revenue growth.

Competitive landscaping:

To understand the competitive landscape, we are analyzing key RF Gallium Nitride Market vendors in the market. To understand the competitive rivalry, we are comparing the revenue, expenses, resources, product portfolio, region coverage, market share, key initiatives, product launches, and any news related to the RF Gallium Nitride Market.

To validate our hypothesis and validate our findings on the market ecosystem, we are also conducting a detailed porter's five forces analysis. Competitive Rivalry, Supplier Power, Buyer Power, Threat of Substitution, and Threat of New Entry each force is analyzed by various parameters governing those forces.

Key Players Covered in the Report:

  • ium Nitride Market was valued at USD 1.3 billion in 2022 and is projected to reach USD 2.8 billion by 2028; it is expected to register a CAGR of 12.9% during the forecast period.
  • The advantages of GaN over traditional SI, heightened demand from consumers and enterprises and automotive vertical for power electronics devices, and the suitability of GaN in RF applications are among the factors driving the growth of the RF gallium nitride market.
  • Driver: Advantage of GaN over traditional SI
  • Power applications are moving towards smaller and more efficient solutions. To achieve higher power density so that devices can be accommodated in smaller packages, GaN is ideal for replacing silicon where space is limited. Due to their superior performance, GaN-based power devices are increasingly being deployed in power electronics applications comprising power converters, inverters, and motor drives. GaN device development and manufacturing may further differ due to the distinctive features of GaN materials, which integrate improved heat dissipation techniques such as flip-chip bonding, wafer thinning, and the use of heat sinks or substrates with high thermal conductivity. These devices may operate at higher frequencies and manage larger power densities, which leads to increased energy efficiency and decreased system size.
  • The GaN devices provide benefits such as higher breakdown voltage, higher electron mobility and lower switching losses, thereby reducing operating costs and environmental damage. GaN devices are frequently designed with high-frequency operation, high power density, and effective heat dissipation in mind. To effectively maximize its advantages, GaN device designs must take into account the unique properties of GaN materials, such as their greater breakdown voltage and wider bandgap.
  • GaN-based power transistors are widely used in power electronics applications. Such devices are appropriate for power converters, inverters, motor drives, and various other applications which require effective power conversion and high-power handling capacities because they have high power density, high efficiency, and high-frequency operation. In general, wide bandgap semiconductors are suitable for high power density applications, high operating voltage applications with low power consumption, and high RF output applications in wireless communications.
  • Meanwhile, GaN technology is projected to enter more applications such as data augmentation, medical imaging, cybersecurity as a result of its special qualities and performance advantages. GaN's unique features make it particularly important in specific applications where the benefits overcome the limitations and justify the usage of this advanced semiconductor material.
  • Restraint: Higher efficacy of alternative such as Silicon Carbide (SiC) for high-voltage semiconductor applications
  • Silicon Carbide (SiC) and Gallium Nitride (GaN) are high-performance wide-bandgap semiconductor materials that perform better than standard silicon (Si) in a variety of applications. The decision between Silicon Carbide (SiC) and Gallium Nitride (GaN) in terms of efficiency depends on the particular needs of the application. Due to their higher breakdown voltage capabilities, SiC devices are often better suited for high-voltage applications. SiC power components are suitable for grid-level applications, high-power inverters, and the infrastructure of the electrical grid because they can withstand greater voltages. However, GaN devices are generally employed in low- to medium-voltage applications, including consumer electronics, server power supply, and automotive systems.
  • Furthermore, GaN devices are often more expensive than SiC devices. GaN devices are more expensive because of the complex production process and the requirement for specific tools and materials. However, SiC devices benefit from economies of scale and a more developed supply chain, which can lead to cheaper production costs. Both technologies are still evolving, and modern research and development activities attempt to solve these problems and increase the performance, cost-effectiveness, and scalability of GaN devices.
  • Opportunity: Evolving renewable energy applications of GaN
  • Solar power is one of the fastest-growing solutions for residential and commercial customers, also essential for developing a sustainable future. The growing awareness of the relevance of solar energy has resulted in an increase in study in the field of solar energy harvesting. GaN technology allows for better power densities in renewable energy systems as they can handle higher voltages and currents. For applications like energy storage systems and electric vehicle chargers, where power electronics must be small and offer high power levels, a higher power density is essential.
  • GaN-based devices are superior in comparison to traditional silicon-based devices in several ways, making them suitable for use in a variety of renewable energy applications. GaN-based converters and inverters may operate at greater switching frequencies, lowering the size and weight of the power electronics and enhancing overall system efficiency.
  • Challenge: High material and fabrication costs
  • The raw material which is required for GaN manufacturing, such as gallium and nitrogen precursors, can be costly when compared to those material used in Si-based devices. GaN epitaxial layers are typically manufactured on silicon carbide (SiC) or sapphire substrates, which can increase the cost of the raw materials. The price of materials is also increased by the particular equipment and processes needed to create GaN epitaxial layers.
  • Additionally, GaN device fabrication is a relatively challenging procedure that often asks for specialized equipment like molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) systems. It costs significantly much to buy, operate, and maintain these systems. The entire cost of manufacturing GaN devices is increased by the fabrication process' complexity and the requirement for strict process control.
  • As manufacturing techniques get more advanced and volume production rises, the costs related to GaN technology continue to gradually drop over time. It is projected that the cost of GaN devices will decrease as material growth methods and production procedures continue to progress.
  • RF Gallium Nitride Market Ecosystem
  • Prominent companies in this market include well-established, financially stable providers of RF GaN devices. These companies have been operating in the market for several years and possess a diversified product portfolio, state-of-the-art technologies, and strong global sales and marketing networks. Prominent companies in this market include Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), and STMicroelectronics N.V. (Switzerland).
  • By end use, the satellite communication segment is expected to grow with the highest CAGR from 2023 to 2028
  • The RF gallium nitride market for satellite communication is expected to grow at the highest CAGR from 2023 to 2028. Satellite communication is a key enabler of high-speed data transmission, especially in remote and rural areas where there is no other infrastructure available. RF GaN devices are well-suited for satellite communication applications because they offer high power efficiency and bandwidth, which are essential for transmitting large amounts of data over long distances. Also, There are a number of new satellite constellations being developed, which will provide global coverage and high data rates. RF GaN devices are essential for these new constellations, as they offer the power efficiency and reliability necessary to operate in space. These factors are expected to drive the market for satellite communication end use in the RF gallium nitride market.
  • By wafer size, the 200 and more segment is expected to grow with a higher CAGR during the forecast period.
  • 200 and more are expected to exhibit a higher CAGR in the RF gallium nitride market, by wafer size, from 2023 to 2028. The growth can be attributed to larger wafer sizes allowing for more dies to be produced per wafer, which can lead to significant cost savings. For instance, a 200mm wafer can produce up to 100 times more dies than a 6-inch wafer. This can lead to significant cost savings for RF GaN devices, as the cost of the wafer is a major factor in the overall cost of the device. Also, as the demand for RF GaN devices grows, the availability of materials for these devices is also increasing. This is leading to more 200mm and bigger wafer sizes becoming available, which is further driving the growth of this market segment.
  • In 2028, North America is projected to hold the highest CAGR of the overall RF gallium nitride market.
  • In 2028, North America is expected to witness the highest CAGR. The growth in this region can be attributed to the growing electric and hybrid electric vehicle market is also supporting this growth in North America. In the electric and hybrid electric vehicle market, RF GaN devices have revolutionized the whole electronics system. The use of RF GaN devices in such vehicles leads to smaller systems, thereby reducing the weight of the overall vehicle and aiding in battery management. The growth of gallium nitride is dominated by the US due to the presence of large number of key players in the country. WOLFSPEED, INC., ON Semiconductor Corporation, Coherent Corp, Qorvo, Inc., MACOM are a few of the players catering to the RF GaN market.
  • Recent Developments
  • In March 2023, Infineon Technologies AG acquired GaN Systems Inc (Canada)., a leader in Gallium Nitride (GaN) power transistors. This acquisition will accelerate the Infineon GaN roadmap and strengthen its leadership in power systems.
  • In February 2023, MACOM acquired OMMIC SAS (France), a supplier of epitaxial wafers, foundry services and MMICs. With this acquisition MACOM is focused on entering the European markets, expand their wafer production capability and extend our product offerings to higher millimeter-wave frequencies, which are all in line with our long-term strategy.
  • In March 2023, ON Semiconductor Corporation relocated the headquarter from Phoenix to Scottsdale, Arizona. With the relocation the company energy consumption will be reduced by 12.84 million kWh compared to its energy use in 2021, and thus positively impact the company's journey to its net-zero emissions by 2040 goal.
  • In April 2022, ROHM Co., Ltd. partnered with Delta Electronics, Inc. to develop and mass produce next-generation GaN (gallium nitride) power devices. With Delta’s power supply device development technology and with ROHM’s power development and manufacturing expertise developed 600V breakdown voltage GaN power devices optimized for a wide range of power supply systems.
  • KEY MARKET SEGMENTS
  • By Device Type
  • Introduction
  • Discrete RF Device
  • Integrated RF Device
  • By Wafer Size
  • Introduction
  • <200 mm
  • 200 and More
  • By End Use
  • Introduction
  • Telecom Infrastructure
  • Satellite Communication
  • Military and Defence
  • Others
  • By Geography
  • Introduction
  • North America
  • Recession Impact
  • US
  • Canada
  • Mexico
  • Europe
  • Recession Impact
  • Germany
  • UK
  • France
  • Rest of Europe
  • Asia Pacific
  • Recession Impact
  • China
  • Japan
  • South Korea
  • Rest of Asia Pacific
  • RoW
  • Recession Impact
  • Middle East & Africa
  • South America
  • KEY MARKET PLAYERS
  • Sumitomo Electric Device Innovations, Inc.
  • Qorvo, Inc.
  • WOLFSPEED, INC.
  • NXP Semiconductors
  • MACOM
  • Infineon Technologies AG
  • ROHM Co., Ltd.
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • STMicroelectronics N.V.

SkyQuest's Expertise:

The RF Gallium Nitride Market is being analyzed by SkyQuest's analysts with the help of 20+ scheduled Primary interviews from both the demand and supply sides. We have already invested more than 250 hours on this report and are still refining our date to provide authenticated data to your readers and clients. Exhaustive primary and secondary research is conducted to collect information on the market, peer market, and parent market.

Our cross-industry experts and revenue-impact consultants at SkyQuest enable our clients to convert market intelligence into actionable, quantifiable results through personalized engagement.

Scope Of Report

Report Attribute Details
The base year for estimation 2021
Historical data 2016 – 2022
Forecast period 2022 – 2028
Report coverage Revenue forecast, volume forecast, company ranking, competitive landscape, growth factors, and trends, Pricing Analysis
Segments covered
  • By Device Type - Introduction, Discrete RF Device, Integrated RF Device
  • By Wafer Size - Introduction, <200 mm, 200 and More
  • By End Use - Introduction, Telecom Infrastructure, Satellite Communication, Military and Defence, Others
  • By Geography - Introduction, North America, Recession Impact, US, Canada, Mexico, Europe, Recession Impact, Germany, UK, France, Rest of Europe, Asia Pacific, Recession Impact, China, Japan, South Korea, Rest of Asia Pacific, RoW, Recession Impact, Middle East & Africa, South America, KEY MARKET PLAYERS, Sumitomo Electric Device Innovations, Inc., Qorvo, Inc., WOLFSPEED, INC., NXP Semiconductors, MACOM, Infineon Technologies AG, ROHM Co., Ltd., Texas Instruments Incorporated, Toshiba Corporation
Regional scope North America, Europe, Asia-Pacific (APAC), Latin America (LATAM), Middle East & Africa (MEA)
Country scope U.S., Canada, Germany, France, UK, Italy, Spain, China, India, Japan, Brazil, GCC Countries, South Africa
Key companies profiled
  • ium Nitride Market was valued at USD 1.3 billion in 2022 and is projected to reach USD 2.8 billion by 2028; it is expected to register a CAGR of 12.9% during the forecast period.
  • The advantages of GaN over traditional SI, heightened demand from consumers and enterprises and automotive vertical for power electronics devices, and the suitability of GaN in RF applications are among the factors driving the growth of the RF gallium nitride market.
  • Driver: Advantage of GaN over traditional SI
  • Power applications are moving towards smaller and more efficient solutions. To achieve higher power density so that devices can be accommodated in smaller packages, GaN is ideal for replacing silicon where space is limited. Due to their superior performance, GaN-based power devices are increasingly being deployed in power electronics applications comprising power converters, inverters, and motor drives. GaN device development and manufacturing may further differ due to the distinctive features of GaN materials, which integrate improved heat dissipation techniques such as flip-chip bonding, wafer thinning, and the use of heat sinks or substrates with high thermal conductivity. These devices may operate at higher frequencies and manage larger power densities, which leads to increased energy efficiency and decreased system size.
  • The GaN devices provide benefits such as higher breakdown voltage, higher electron mobility and lower switching losses, thereby reducing operating costs and environmental damage. GaN devices are frequently designed with high-frequency operation, high power density, and effective heat dissipation in mind. To effectively maximize its advantages, GaN device designs must take into account the unique properties of GaN materials, such as their greater breakdown voltage and wider bandgap.
  • GaN-based power transistors are widely used in power electronics applications. Such devices are appropriate for power converters, inverters, motor drives, and various other applications which require effective power conversion and high-power handling capacities because they have high power density, high efficiency, and high-frequency operation. In general, wide bandgap semiconductors are suitable for high power density applications, high operating voltage applications with low power consumption, and high RF output applications in wireless communications.
  • Meanwhile, GaN technology is projected to enter more applications such as data augmentation, medical imaging, cybersecurity as a result of its special qualities and performance advantages. GaN's unique features make it particularly important in specific applications where the benefits overcome the limitations and justify the usage of this advanced semiconductor material.
  • Restraint: Higher efficacy of alternative such as Silicon Carbide (SiC) for high-voltage semiconductor applications
  • Silicon Carbide (SiC) and Gallium Nitride (GaN) are high-performance wide-bandgap semiconductor materials that perform better than standard silicon (Si) in a variety of applications. The decision between Silicon Carbide (SiC) and Gallium Nitride (GaN) in terms of efficiency depends on the particular needs of the application. Due to their higher breakdown voltage capabilities, SiC devices are often better suited for high-voltage applications. SiC power components are suitable for grid-level applications, high-power inverters, and the infrastructure of the electrical grid because they can withstand greater voltages. However, GaN devices are generally employed in low- to medium-voltage applications, including consumer electronics, server power supply, and automotive systems.
  • Furthermore, GaN devices are often more expensive than SiC devices. GaN devices are more expensive because of the complex production process and the requirement for specific tools and materials. However, SiC devices benefit from economies of scale and a more developed supply chain, which can lead to cheaper production costs. Both technologies are still evolving, and modern research and development activities attempt to solve these problems and increase the performance, cost-effectiveness, and scalability of GaN devices.
  • Opportunity: Evolving renewable energy applications of GaN
  • Solar power is one of the fastest-growing solutions for residential and commercial customers, also essential for developing a sustainable future. The growing awareness of the relevance of solar energy has resulted in an increase in study in the field of solar energy harvesting. GaN technology allows for better power densities in renewable energy systems as they can handle higher voltages and currents. For applications like energy storage systems and electric vehicle chargers, where power electronics must be small and offer high power levels, a higher power density is essential.
  • GaN-based devices are superior in comparison to traditional silicon-based devices in several ways, making them suitable for use in a variety of renewable energy applications. GaN-based converters and inverters may operate at greater switching frequencies, lowering the size and weight of the power electronics and enhancing overall system efficiency.
  • Challenge: High material and fabrication costs
  • The raw material which is required for GaN manufacturing, such as gallium and nitrogen precursors, can be costly when compared to those material used in Si-based devices. GaN epitaxial layers are typically manufactured on silicon carbide (SiC) or sapphire substrates, which can increase the cost of the raw materials. The price of materials is also increased by the particular equipment and processes needed to create GaN epitaxial layers.
  • Additionally, GaN device fabrication is a relatively challenging procedure that often asks for specialized equipment like molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) systems. It costs significantly much to buy, operate, and maintain these systems. The entire cost of manufacturing GaN devices is increased by the fabrication process' complexity and the requirement for strict process control.
  • As manufacturing techniques get more advanced and volume production rises, the costs related to GaN technology continue to gradually drop over time. It is projected that the cost of GaN devices will decrease as material growth methods and production procedures continue to progress.
  • RF Gallium Nitride Market Ecosystem
  • Prominent companies in this market include well-established, financially stable providers of RF GaN devices. These companies have been operating in the market for several years and possess a diversified product portfolio, state-of-the-art technologies, and strong global sales and marketing networks. Prominent companies in this market include Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), and STMicroelectronics N.V. (Switzerland).
  • By end use, the satellite communication segment is expected to grow with the highest CAGR from 2023 to 2028
  • The RF gallium nitride market for satellite communication is expected to grow at the highest CAGR from 2023 to 2028. Satellite communication is a key enabler of high-speed data transmission, especially in remote and rural areas where there is no other infrastructure available. RF GaN devices are well-suited for satellite communication applications because they offer high power efficiency and bandwidth, which are essential for transmitting large amounts of data over long distances. Also, There are a number of new satellite constellations being developed, which will provide global coverage and high data rates. RF GaN devices are essential for these new constellations, as they offer the power efficiency and reliability necessary to operate in space. These factors are expected to drive the market for satellite communication end use in the RF gallium nitride market.
  • By wafer size, the 200 and more segment is expected to grow with a higher CAGR during the forecast period.
  • 200 and more are expected to exhibit a higher CAGR in the RF gallium nitride market, by wafer size, from 2023 to 2028. The growth can be attributed to larger wafer sizes allowing for more dies to be produced per wafer, which can lead to significant cost savings. For instance, a 200mm wafer can produce up to 100 times more dies than a 6-inch wafer. This can lead to significant cost savings for RF GaN devices, as the cost of the wafer is a major factor in the overall cost of the device. Also, as the demand for RF GaN devices grows, the availability of materials for these devices is also increasing. This is leading to more 200mm and bigger wafer sizes becoming available, which is further driving the growth of this market segment.
  • In 2028, North America is projected to hold the highest CAGR of the overall RF gallium nitride market.
  • In 2028, North America is expected to witness the highest CAGR. The growth in this region can be attributed to the growing electric and hybrid electric vehicle market is also supporting this growth in North America. In the electric and hybrid electric vehicle market, RF GaN devices have revolutionized the whole electronics system. The use of RF GaN devices in such vehicles leads to smaller systems, thereby reducing the weight of the overall vehicle and aiding in battery management. The growth of gallium nitride is dominated by the US due to the presence of large number of key players in the country. WOLFSPEED, INC., ON Semiconductor Corporation, Coherent Corp, Qorvo, Inc., MACOM are a few of the players catering to the RF GaN market.
  • Recent Developments
  • In March 2023, Infineon Technologies AG acquired GaN Systems Inc (Canada)., a leader in Gallium Nitride (GaN) power transistors. This acquisition will accelerate the Infineon GaN roadmap and strengthen its leadership in power systems.
  • In February 2023, MACOM acquired OMMIC SAS (France), a supplier of epitaxial wafers, foundry services and MMICs. With this acquisition MACOM is focused on entering the European markets, expand their wafer production capability and extend our product offerings to higher millimeter-wave frequencies, which are all in line with our long-term strategy.
  • In March 2023, ON Semiconductor Corporation relocated the headquarter from Phoenix to Scottsdale, Arizona. With the relocation the company energy consumption will be reduced by 12.84 million kWh compared to its energy use in 2021, and thus positively impact the company's journey to its net-zero emissions by 2040 goal.
  • In April 2022, ROHM Co., Ltd. partnered with Delta Electronics, Inc. to develop and mass produce next-generation GaN (gallium nitride) power devices. With Delta’s power supply device development technology and with ROHM’s power development and manufacturing expertise developed 600V breakdown voltage GaN power devices optimized for a wide range of power supply systems.
  • KEY MARKET SEGMENTS
  • By Device Type
  • Introduction
  • Discrete RF Device
  • Integrated RF Device
  • By Wafer Size
  • Introduction
  • <200 mm
  • 200 and More
  • By End Use
  • Introduction
  • Telecom Infrastructure
  • Satellite Communication
  • Military and Defence
  • Others
  • By Geography
  • Introduction
  • North America
  • Recession Impact
  • US
  • Canada
  • Mexico
  • Europe
  • Recession Impact
  • Germany
  • UK
  • France
  • Rest of Europe
  • Asia Pacific
  • Recession Impact
  • China
  • Japan
  • South Korea
  • Rest of Asia Pacific
  • RoW
  • Recession Impact
  • Middle East & Africa
  • South America
  • KEY MARKET PLAYERS
  • Sumitomo Electric Device Innovations, Inc.
  • Qorvo, Inc.
  • WOLFSPEED, INC.
  • NXP Semiconductors
  • MACOM
  • Infineon Technologies AG
  • ROHM Co., Ltd.
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • STMicroelectronics N.V.
Customization scope Free report customization (15% Free customization) with purchase. Addition or alteration to country, regional & segment scope.
Pricing and purchase options Reap the benefits of customized purchase options to fit your specific research requirements.

Objectives of the Study

  • To forecast the market size, in terms of value, for various segments with respect to five main regions, namely, North America, Europe, Asia-Pacific (APAC), Latin America (LATAM), Middle East & Africa (MEA)
  • To provide detailed information regarding the major factors influencing the growth of the Market (drivers, restraints, opportunities, and challenges)
  • To strategically analyze the micro markets with respect to the individual growth trends, future prospects, and contribution to the total market
  • To provide a detailed overview of the value chain and analyze market trends with the Porter's five forces analysis
  • To analyze the opportunities in the market for various stakeholders by identifying the high-growth Segments
  • To identify the key players and comprehensively analyze their market position in terms of ranking and core competencies, along with detailing the competitive landscape for the market leaders
  • To analyze competitive development such as joint ventures, mergers and acquisitions, new product launches and development, and research and development in the market

What does this Report Deliver?

  • Market Estimation for 20+ Countries
  • Historical data coverage: 2016 to 2022
  • Growth projections: 2022 to 2028
  • SkyQuest's premium market insights: Innovation matrix, IP analysis, Production Analysis, Value chain analysis, Technological trends, and Trade analysis
  • Customization on Segments, Regions, and Company Profiles
  • 100+ tables, 150+ Figures, 10+ matrix
  • Global and Country Market Trends
  • Comprehensive Mapping of Industry Parameters
  • Attractive Investment Proposition
  • Competitive Strategies Adopted by Leading Market Participants
  • Market drivers, restraints, opportunities, and its impact on the market
  • Regulatory scenario, regional dynamics, and insights of leading countries in each region
  • Segment trends analysis, opportunity, and growth
  • Opportunity analysis by region and country
  • Porter's five force analysis to know the market's condition
  • Pricing analysis
  • Parent market analysis
  • Product portfolio benchmarking

Table Of Content

Executive Summary

Market overview

  • Exhibit: Executive Summary – Chart on Market Overview
  • Exhibit: Executive Summary – Data Table on Market Overview
  • Exhibit: Executive Summary – Chart on RF Gallium Nitride Market Characteristics
  • Exhibit: Executive Summary – Chart on Market by Geography
  • Exhibit: Executive Summary – Chart on Market Segmentation
  • Exhibit: Executive Summary – Chart on Incremental Growth
  • Exhibit: Executive Summary – Data Table on Incremental Growth
  • Exhibit: Executive Summary – Chart on Vendor Market Positioning

Parent Market Analysis

Market overview

Market size

  • Market Dynamics
    • Exhibit: Impact analysis of DROC, 2021
      • Drivers
      • Opportunities
      • Restraints
      • Challenges
  • SWOT Analysis

KEY MARKET INSIGHTS

  • Technology Analysis
    • (Exhibit: Data Table: Name of technology and details)
  • Pricing Analysis
    • (Exhibit: Data Table: Name of technology and pricing details)
  • Supply Chain Analysis
    • (Exhibit: Detailed Supply Chain Presentation)
  • Value Chain Analysis
    • (Exhibit: Detailed Value Chain Presentation)
  • Ecosystem Of the Market
    • Exhibit: Parent Market Ecosystem Market Analysis
    • Exhibit: Market Characteristics of Parent Market
  • IP Analysis
    • (Exhibit: Data Table: Name of product/technology, patents filed, inventor/company name, acquiring firm)
  • Trade Analysis
    • (Exhibit: Data Table: Import and Export data details)
  • Startup Analysis
    • (Exhibit: Data Table: Emerging startups details)
  • Raw Material Analysis
    • (Exhibit: Data Table: Mapping of key raw materials)
  • Innovation Matrix
    • (Exhibit: Positioning Matrix: Mapping of new and existing technologies)
  • Pipeline product Analysis
    • (Exhibit: Data Table: Name of companies and pipeline products, regional mapping)
  • Macroeconomic Indicators

COVID IMPACT

  • Introduction
  • Impact On Economy—scenario Assessment
    • Exhibit: Data on GDP - Year-over-year growth 2016-2022 (%)
  • Revised Market Size
    • Exhibit: Data Table on RF Gallium Nitride Market size and forecast 2021-2027 ($ million)
  • Impact Of COVID On Key Segments
    • Exhibit: Data Table on Segment Market size and forecast 2021-2027 ($ million)
  • COVID Strategies By Company
    • Exhibit: Analysis on key strategies adopted by companies

MARKET DYNAMICS & OUTLOOK

  • Market Dynamics
    • Exhibit: Impact analysis of DROC, 2021
      • Drivers
      • Opportunities
      • Restraints
      • Challenges
  • Regulatory Landscape
    • Exhibit: Data Table on regulation from different region
  • SWOT Analysis
  • Porters Analysis
    • Competitive rivalry
      • Exhibit: Competitive rivalry Impact of key factors, 2021
    • Threat of substitute products
      • Exhibit: Threat of Substitute Products Impact of key factors, 2021
    • Bargaining power of buyers
      • Exhibit: buyers bargaining power Impact of key factors, 2021
    • Threat of new entrants
      • Exhibit: Threat of new entrants Impact of key factors, 2021
    • Bargaining power of suppliers
      • Exhibit: Threat of suppliers bargaining power Impact of key factors, 2021
  • Skyquest special insights on future disruptions
    • Political Impact
    • Economic impact
    • Social Impact
    • Technical Impact
    • Environmental Impact
    • Legal Impact

Market Size by Region

  • Chart on Market share by geography 2021-2027 (%)
  • Data Table on Market share by geography 2021-2027(%)
  • North America
    • Chart on Market share by country 2021-2027 (%)
    • Data Table on Market share by country 2021-2027(%)
    • USA
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Canada
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
  • Europe
    • Chart on Market share by country 2021-2027 (%)
    • Data Table on Market share by country 2021-2027(%)
    • Germany
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Spain
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • France
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • UK
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Rest of Europe
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
  • Asia Pacific
    • Chart on Market share by country 2021-2027 (%)
    • Data Table on Market share by country 2021-2027(%)
    • China
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • India
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Japan
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • South Korea
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Rest of Asia Pacific
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
  • Latin America
    • Chart on Market share by country 2021-2027 (%)
    • Data Table on Market share by country 2021-2027(%)
    • Brazil
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Rest of South America
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
  • Middle East & Africa (MEA)
    • Chart on Market share by country 2021-2027 (%)
    • Data Table on Market share by country 2021-2027(%)
    • GCC Countries
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • South Africa
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)
    • Rest of MEA
      • Exhibit: Chart on Market share 2021-2027 (%)
      • Exhibit: Market size and forecast 2021-2027 ($ million)

KEY COMPANY PROFILES

  • Competitive Landscape
    • Total number of companies covered
      • Exhibit: companies covered in the report, 2021
    • Top companies market positioning
      • Exhibit: company positioning matrix, 2021
    • Top companies market Share
      • Exhibit: Pie chart analysis on company market share, 2021(%)
  • ium Nitride Market was valued at USD 1.3 billion in 2022 and is projected to reach USD 2.8 billion by 2028; it is expected to register a CAGR of 12.9% during the forecast period.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • The advantages of GaN over traditional SI, heightened demand from consumers and enterprises and automotive vertical for power electronics devices, and the suitability of GaN in RF applications are among the factors driving the growth of the RF gallium nitride market.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Driver: Advantage of GaN over traditional SI
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Power applications are moving towards smaller and more efficient solutions. To achieve higher power density so that devices can be accommodated in smaller packages, GaN is ideal for replacing silicon where space is limited. Due to their superior performance, GaN-based power devices are increasingly being deployed in power electronics applications comprising power converters, inverters, and motor drives. GaN device development and manufacturing may further differ due to the distinctive features of GaN materials, which integrate improved heat dissipation techniques such as flip-chip bonding, wafer thinning, and the use of heat sinks or substrates with high thermal conductivity. These devices may operate at higher frequencies and manage larger power densities, which leads to increased energy efficiency and decreased system size.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • The GaN devices provide benefits such as higher breakdown voltage, higher electron mobility and lower switching losses, thereby reducing operating costs and environmental damage. GaN devices are frequently designed with high-frequency operation, high power density, and effective heat dissipation in mind. To effectively maximize its advantages, GaN device designs must take into account the unique properties of GaN materials, such as their greater breakdown voltage and wider bandgap.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • GaN-based power transistors are widely used in power electronics applications. Such devices are appropriate for power converters, inverters, motor drives, and various other applications which require effective power conversion and high-power handling capacities because they have high power density, high efficiency, and high-frequency operation. In general, wide bandgap semiconductors are suitable for high power density applications, high operating voltage applications with low power consumption, and high RF output applications in wireless communications.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Meanwhile, GaN technology is projected to enter more applications such as data augmentation, medical imaging, cybersecurity as a result of its special qualities and performance advantages. GaN's unique features make it particularly important in specific applications where the benefits overcome the limitations and justify the usage of this advanced semiconductor material.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Restraint: Higher efficacy of alternative such as Silicon Carbide (SiC) for high-voltage semiconductor applications
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Silicon Carbide (SiC) and Gallium Nitride (GaN) are high-performance wide-bandgap semiconductor materials that perform better than standard silicon (Si) in a variety of applications. The decision between Silicon Carbide (SiC) and Gallium Nitride (GaN) in terms of efficiency depends on the particular needs of the application. Due to their higher breakdown voltage capabilities, SiC devices are often better suited for high-voltage applications. SiC power components are suitable for grid-level applications, high-power inverters, and the infrastructure of the electrical grid because they can withstand greater voltages. However, GaN devices are generally employed in low- to medium-voltage applications, including consumer electronics, server power supply, and automotive systems.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Furthermore, GaN devices are often more expensive than SiC devices. GaN devices are more expensive because of the complex production process and the requirement for specific tools and materials. However, SiC devices benefit from economies of scale and a more developed supply chain, which can lead to cheaper production costs. Both technologies are still evolving, and modern research and development activities attempt to solve these problems and increase the performance, cost-effectiveness, and scalability of GaN devices.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Opportunity: Evolving renewable energy applications of GaN
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Solar power is one of the fastest-growing solutions for residential and commercial customers, also essential for developing a sustainable future. The growing awareness of the relevance of solar energy has resulted in an increase in study in the field of solar energy harvesting. GaN technology allows for better power densities in renewable energy systems as they can handle higher voltages and currents. For applications like energy storage systems and electric vehicle chargers, where power electronics must be small and offer high power levels, a higher power density is essential.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • GaN-based devices are superior in comparison to traditional silicon-based devices in several ways, making them suitable for use in a variety of renewable energy applications. GaN-based converters and inverters may operate at greater switching frequencies, lowering the size and weight of the power electronics and enhancing overall system efficiency.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Challenge: High material and fabrication costs
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • The raw material which is required for GaN manufacturing, such as gallium and nitrogen precursors, can be costly when compared to those material used in Si-based devices. GaN epitaxial layers are typically manufactured on silicon carbide (SiC) or sapphire substrates, which can increase the cost of the raw materials. The price of materials is also increased by the particular equipment and processes needed to create GaN epitaxial layers.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Additionally, GaN device fabrication is a relatively challenging procedure that often asks for specialized equipment like molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) systems. It costs significantly much to buy, operate, and maintain these systems. The entire cost of manufacturing GaN devices is increased by the fabrication process' complexity and the requirement for strict process control.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • As manufacturing techniques get more advanced and volume production rises, the costs related to GaN technology continue to gradually drop over time. It is projected that the cost of GaN devices will decrease as material growth methods and production procedures continue to progress.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • RF Gallium Nitride Market Ecosystem
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Prominent companies in this market include well-established, financially stable providers of RF GaN devices. These companies have been operating in the market for several years and possess a diversified product portfolio, state-of-the-art technologies, and strong global sales and marketing networks. Prominent companies in this market include Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), and STMicroelectronics N.V. (Switzerland).
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • By end use, the satellite communication segment is expected to grow with the highest CAGR from 2023 to 2028
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • The RF gallium nitride market for satellite communication is expected to grow at the highest CAGR from 2023 to 2028. Satellite communication is a key enabler of high-speed data transmission, especially in remote and rural areas where there is no other infrastructure available. RF GaN devices are well-suited for satellite communication applications because they offer high power efficiency and bandwidth, which are essential for transmitting large amounts of data over long distances. Also, There are a number of new satellite constellations being developed, which will provide global coverage and high data rates. RF GaN devices are essential for these new constellations, as they offer the power efficiency and reliability necessary to operate in space. These factors are expected to drive the market for satellite communication end use in the RF gallium nitride market.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • By wafer size, the 200 and more segment is expected to grow with a higher CAGR during the forecast period.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • 200 and more are expected to exhibit a higher CAGR in the RF gallium nitride market, by wafer size, from 2023 to 2028. The growth can be attributed to larger wafer sizes allowing for more dies to be produced per wafer, which can lead to significant cost savings. For instance, a 200mm wafer can produce up to 100 times more dies than a 6-inch wafer. This can lead to significant cost savings for RF GaN devices, as the cost of the wafer is a major factor in the overall cost of the device. Also, as the demand for RF GaN devices grows, the availability of materials for these devices is also increasing. This is leading to more 200mm and bigger wafer sizes becoming available, which is further driving the growth of this market segment.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • In 2028, North America is projected to hold the highest CAGR of the overall RF gallium nitride market.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • In 2028, North America is expected to witness the highest CAGR. The growth in this region can be attributed to the growing electric and hybrid electric vehicle market is also supporting this growth in North America. In the electric and hybrid electric vehicle market, RF GaN devices have revolutionized the whole electronics system. The use of RF GaN devices in such vehicles leads to smaller systems, thereby reducing the weight of the overall vehicle and aiding in battery management. The growth of gallium nitride is dominated by the US due to the presence of large number of key players in the country. WOLFSPEED, INC., ON Semiconductor Corporation, Coherent Corp, Qorvo, Inc., MACOM are a few of the players catering to the RF GaN market.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Recent Developments
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • In March 2023, Infineon Technologies AG acquired GaN Systems Inc (Canada)., a leader in Gallium Nitride (GaN) power transistors. This acquisition will accelerate the Infineon GaN roadmap and strengthen its leadership in power systems.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • In February 2023, MACOM acquired OMMIC SAS (France), a supplier of epitaxial wafers, foundry services and MMICs. With this acquisition MACOM is focused on entering the European markets, expand their wafer production capability and extend our product offerings to higher millimeter-wave frequencies, which are all in line with our long-term strategy.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • In March 2023, ON Semiconductor Corporation relocated the headquarter from Phoenix to Scottsdale, Arizona. With the relocation the company energy consumption will be reduced by 12.84 million kWh compared to its energy use in 2021, and thus positively impact the company's journey to its net-zero emissions by 2040 goal.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • In April 2022, ROHM Co., Ltd. partnered with Delta Electronics, Inc. to develop and mass produce next-generation GaN (gallium nitride) power devices. With Delta’s power supply device development technology and with ROHM’s power development and manufacturing expertise developed 600V breakdown voltage GaN power devices optimized for a wide range of power supply systems.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • KEY MARKET SEGMENTS
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • By Device Type
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Introduction
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Discrete RF Device
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Integrated RF Device
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • By Wafer Size
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Introduction
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • <200 mm
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • 200 and More
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • By End Use
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Introduction
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Telecom Infrastructure
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Satellite Communication
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Military and Defence
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Others
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • By Geography
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Introduction
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • North America
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Recession Impact
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • US
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Canada
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Mexico
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Europe
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Recession Impact
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Germany
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • UK
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • France
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Rest of Europe
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Asia Pacific
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Recession Impact
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • China
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Japan
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • South Korea
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Rest of Asia Pacific
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • RoW
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Recession Impact
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Middle East & Africa
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • South America
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • KEY MARKET PLAYERS
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Sumitomo Electric Device Innovations, Inc.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Qorvo, Inc.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • WOLFSPEED, INC.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • NXP Semiconductors
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • MACOM
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Infineon Technologies AG
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • ROHM Co., Ltd.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Texas Instruments Incorporated
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • Toshiba Corporation
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments
  • STMicroelectronics N.V.
    • Exhibit Company Overview
    • Exhibit Business Segment Overview
    • Exhibit Financial Updates
    • Exhibit Key Developments

Methodology

For the RF Gallium Nitride Market, our research methodology involved a mixture of primary and secondary data sources. Key steps involved in the research process are listed below:

1. Information Procurement: This stage involved the procurement of Market data or related information via primary and secondary sources. The various secondary sources used included various company websites, annual reports, trade databases, and paid databases such as Hoover's, Bloomberg Business, Factiva, and Avention. Our team did 45 primary interactions Globally which included several stakeholders such as manufacturers, customers, key opinion leaders, etc. Overall, information procurement was one of the most extensive stages in our research process.

2. Information Analysis: This step involved triangulation of data through bottom-up and top-down approaches to estimate and validate the total size and future estimate of the RF Gallium Nitride Market.

3. Report Formulation: The final step entailed the placement of data points in appropriate Market spaces in an attempt to deduce viable conclusions.

4. Validation & Publishing: Validation is the most important step in the process. Validation & re-validation via an intricately designed process helped us finalize data points to be used for final calculations. The final Market estimates and forecasts were then aligned and sent to our panel of industry experts for validation of data. Once the validation was done the report was sent to our Quality Assurance team to ensure adherence to style guides, consistency & design.

Analyst Support

Customization Options

With the given market data, our dedicated team of analysts can offer you the following customization options are available for the RF Gallium Nitride Market:

Product Analysis: Product matrix, which offers a detailed comparison of the product portfolio of companies.

Regional Analysis: Further analysis of the RF Gallium Nitride Market for additional countries.

Competitive Analysis: Detailed analysis and profiling of additional Market players & comparative analysis of competitive products.

Go to Market Strategy: Find the high-growth channels to invest your marketing efforts and increase your customer base.

Innovation Mapping: Identify racial solutions and innovation, connected to deep ecosystems of innovators, start-ups, academics, and strategic partners.

Category Intelligence: Customized intelligence that is relevant to their supply Markets will enable them to make smarter sourcing decisions and improve their category management.

Public Company Transcript Analysis: To improve the investment performance by generating new alpha and making better-informed decisions.

Social Media Listening: To analyze the conversations and trends happening not just around your brand, but around your industry as a whole, and use those insights to make better Marketing decisions.

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FAQs

The market for RF Gallium Nitride was estimated to be valued at US$ XX Mn in 2021.

The RF Gallium Nitride Market is estimated to grow at a CAGR of XX% by 2028.

The RF Gallium Nitride Market is segmented on the basis of Device Type, Wafer Size, End Use, Geography.

Based on region, the RF Gallium Nitride Market is segmented into North America, Europe, Asia Pacific, Middle East & Africa and Latin America.

The key players operating in the RF Gallium Nitride Market are ium Nitride Market was valued at USD 1.3 billion in 2022 and is projected to reach USD 2.8 billion by 2028; it is expected to register a CAGR of 12.9% during the forecast period. , The advantages of GaN over traditional SI, heightened demand from consumers and enterprises and automotive vertical for power electronics devices, and the suitability of GaN in RF applications are among the factors driving the growth of the RF gallium nitride market. , Driver: Advantage of GaN over traditional SI , Power applications are moving towards smaller and more efficient solutions. To achieve higher power density so that devices can be accommodated in smaller packages, GaN is ideal for replacing silicon where space is limited. Due to their superior performance, GaN-based power devices are increasingly being deployed in power electronics applications comprising power converters, inverters, and motor drives. GaN device development and manufacturing may further differ due to the distinctive features of GaN materials, which integrate improved heat dissipation techniques such as flip-chip bonding, wafer thinning, and the use of heat sinks or substrates with high thermal conductivity. These devices may operate at higher frequencies and manage larger power densities, which leads to increased energy efficiency and decreased system size. , The GaN devices provide benefits such as higher breakdown voltage, higher electron mobility and lower switching losses, thereby reducing operating costs and environmental damage. GaN devices are frequently designed with high-frequency operation, high power density, and effective heat dissipation in mind. To effectively maximize its advantages, GaN device designs must take into account the unique properties of GaN materials, such as their greater breakdown voltage and wider bandgap. , GaN-based power transistors are widely used in power electronics applications. Such devices are appropriate for power converters, inverters, motor drives, and various other applications which require effective power conversion and high-power handling capacities because they have high power density, high efficiency, and high-frequency operation. In general, wide bandgap semiconductors are suitable for high power density applications, high operating voltage applications with low power consumption, and high RF output applications in wireless communications. , Meanwhile, GaN technology is projected to enter more applications such as data augmentation, medical imaging, cybersecurity as a result of its special qualities and performance advantages. GaN's unique features make it particularly important in specific applications where the benefits overcome the limitations and justify the usage of this advanced semiconductor material. , Restraint: Higher efficacy of alternative such as Silicon Carbide (SiC) for high-voltage semiconductor applications , Silicon Carbide (SiC) and Gallium Nitride (GaN) are high-performance wide-bandgap semiconductor materials that perform better than standard silicon (Si) in a variety of applications. The decision between Silicon Carbide (SiC) and Gallium Nitride (GaN) in terms of efficiency depends on the particular needs of the application. Due to their higher breakdown voltage capabilities, SiC devices are often better suited for high-voltage applications. SiC power components are suitable for grid-level applications, high-power inverters, and the infrastructure of the electrical grid because they can withstand greater voltages. However, GaN devices are generally employed in low- to medium-voltage applications, including consumer electronics, server power supply, and automotive systems. , Furthermore, GaN devices are often more expensive than SiC devices. GaN devices are more expensive because of the complex production process and the requirement for specific tools and materials. However, SiC devices benefit from economies of scale and a more developed supply chain, which can lead to cheaper production costs. Both technologies are still evolving, and modern research and development activities attempt to solve these problems and increase the performance, cost-effectiveness, and scalability of GaN devices. , Opportunity: Evolving renewable energy applications of GaN , Solar power is one of the fastest-growing solutions for residential and commercial customers, also essential for developing a sustainable future. The growing awareness of the relevance of solar energy has resulted in an increase in study in the field of solar energy harvesting. GaN technology allows for better power densities in renewable energy systems as they can handle higher voltages and currents. For applications like energy storage systems and electric vehicle chargers, where power electronics must be small and offer high power levels, a higher power density is essential. , GaN-based devices are superior in comparison to traditional silicon-based devices in several ways, making them suitable for use in a variety of renewable energy applications. GaN-based converters and inverters may operate at greater switching frequencies, lowering the size and weight of the power electronics and enhancing overall system efficiency. , Challenge: High material and fabrication costs , The raw material which is required for GaN manufacturing, such as gallium and nitrogen precursors, can be costly when compared to those material used in Si-based devices. GaN epitaxial layers are typically manufactured on silicon carbide (SiC) or sapphire substrates, which can increase the cost of the raw materials. The price of materials is also increased by the particular equipment and processes needed to create GaN epitaxial layers. , Additionally, GaN device fabrication is a relatively challenging procedure that often asks for specialized equipment like molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) systems. It costs significantly much to buy, operate, and maintain these systems. The entire cost of manufacturing GaN devices is increased by the fabrication process' complexity and the requirement for strict process control. , As manufacturing techniques get more advanced and volume production rises, the costs related to GaN technology continue to gradually drop over time. It is projected that the cost of GaN devices will decrease as material growth methods and production procedures continue to progress. , RF Gallium Nitride Market Ecosystem , Prominent companies in this market include well-established, financially stable providers of RF GaN devices. These companies have been operating in the market for several years and possess a diversified product portfolio, state-of-the-art technologies, and strong sales and marketing networks. Prominent companies in this market include Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), and STMicroelectronics N.V. (Switzerland). , By end use, the satellite communication segment is expected to grow with the highest CAGR from 2023 to 2028 , The RF gallium nitride market for satellite communication is expected to grow at the highest CAGR from 2023 to 2028. Satellite communication is a key enabler of high-speed data transmission, especially in remote and rural areas where there is no other infrastructure available. RF GaN devices are well-suited for satellite communication applications because they offer high power efficiency and bandwidth, which are essential for transmitting large amounts of data over long distances. Also, There are a number of new satellite constellations being developed, which will provide coverage and high data rates. RF GaN devices are essential for these new constellations, as they offer the power efficiency and reliability necessary to operate in space. These factors are expected to drive the market for satellite communication end use in the RF gallium nitride market. , By wafer size, the 200 and more segment is expected to grow with a higher CAGR during the forecast period. , 200 and more are expected to exhibit a higher CAGR in the RF gallium nitride market, by wafer size, from 2023 to 2028. The growth can be attributed to larger wafer sizes allowing for more dies to be produced per wafer, which can lead to significant cost savings. For instance, a 200mm wafer can produce up to 100 times more dies than a 6-inch wafer. This can lead to significant cost savings for RF GaN devices, as the cost of the wafer is a major factor in the overall cost of the device. Also, as the demand for RF GaN devices grows, the availability of materials for these devices is also increasing. This is leading to more 200mm and bigger wafer sizes becoming available, which is further driving the growth of this market segment. , In 2028, North America is projected to hold the highest CAGR of the overall RF gallium nitride market. , In 2028, North America is expected to witness the highest CAGR. The growth in this region can be attributed to the growing electric and hybrid electric vehicle market is also supporting this growth in North America. In the electric and hybrid electric vehicle market, RF GaN devices have revolutionized the whole electronics system. The use of RF GaN devices in such vehicles leads to smaller systems, thereby reducing the weight of the overall vehicle and aiding in battery management. The growth of gallium nitride is dominated by the US due to the presence of large number of key players in the country. WOLFSPEED, INC., ON Semiconductor Corporation, Coherent Corp, Qorvo, Inc., MACOM are a few of the players catering to the RF GaN market. , Recent Developments , In March 2023, Infineon Technologies AG acquired GaN Systems Inc (Canada)., a leader in Gallium Nitride (GaN) power transistors. This acquisition will accelerate the Infineon GaN roadmap and strengthen its leadership in power systems. , In February 2023, MACOM acquired OMMIC SAS (France), a supplier of epitaxial wafers, foundry services and MMICs. With this acquisition MACOM is focused on entering the European markets, expand their wafer production capability and extend our product offerings to higher millimeter-wave frequencies, which are all in line with our long-term strategy. , In March 2023, ON Semiconductor Corporation relocated the headquarter from Phoenix to Scottsdale, Arizona. With the relocation the company energy consumption will be reduced by 12.84 million kWh compared to its energy use in 2021, and thus positively impact the company's journey to its net-zero emissions by 2040 goal. , In April 2022, ROHM Co., Ltd. partnered with Delta Electronics, Inc. to develop and mass produce next-generation GaN (gallium nitride) power devices. With Delta’s power supply device development technology and with ROHM’s power development and manufacturing expertise developed 600V breakdown voltage GaN power devices optimized for a wide range of power supply systems. , KEY MARKET SEGMENTS, By Device Type , Introduction , Discrete RF Device , Integrated RF Device , By Wafer Size , Introduction , <200 mm , 200 and More , By End Use , Introduction , Telecom Infrastructure , Satellite Communication , Military and Defence , Others , By Geography , Introduction , North America , Recession Impact , US , Canada , Mexico , Europe , Recession Impact , Germany , UK , France , Rest of Europe , Asia Pacific , Recession Impact , China , Japan , South Korea , Rest of Asia Pacific , RoW , Recession Impact , Middle East & Africa , South America, KEY MARKET PLAYERS , Sumitomo Electric Device Innovations, Inc. , Qorvo, Inc. , WOLFSPEED, INC. , NXP Semiconductors , MACOM , Infineon Technologies AG , ROHM Co., Ltd. , Texas Instruments Incorporated , Toshiba Corporation , STMicroelectronics N.V. .

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