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FAQs

The market for RF Gallium Nitride was estimated to be valued at US$ XX Mn in 2021.

The RF Gallium Nitride Market is estimated to grow at a CAGR of XX% by 2028.

The RF Gallium Nitride Market is segmented on the basis of Device Type, Wafer Size, End Use, Geography.

Based on region, the RF Gallium Nitride Market is segmented into North America, Europe, Asia Pacific, Middle East & Africa and Latin America.

The key players operating in the RF Gallium Nitride Market are ium Nitride Market was valued at USD 1.3 billion in 2022 and is projected to reach USD 2.8 billion by 2028; it is expected to register a CAGR of 12.9% during the forecast period. , The advantages of GaN over traditional SI, heightened demand from consumers and enterprises and automotive vertical for power electronics devices, and the suitability of GaN in RF applications are among the factors driving the growth of the RF gallium nitride market. , Driver: Advantage of GaN over traditional SI , Power applications are moving towards smaller and more efficient solutions. To achieve higher power density so that devices can be accommodated in smaller packages, GaN is ideal for replacing silicon where space is limited. Due to their superior performance, GaN-based power devices are increasingly being deployed in power electronics applications comprising power converters, inverters, and motor drives. GaN device development and manufacturing may further differ due to the distinctive features of GaN materials, which integrate improved heat dissipation techniques such as flip-chip bonding, wafer thinning, and the use of heat sinks or substrates with high thermal conductivity. These devices may operate at higher frequencies and manage larger power densities, which leads to increased energy efficiency and decreased system size. , The GaN devices provide benefits such as higher breakdown voltage, higher electron mobility and lower switching losses, thereby reducing operating costs and environmental damage. GaN devices are frequently designed with high-frequency operation, high power density, and effective heat dissipation in mind. To effectively maximize its advantages, GaN device designs must take into account the unique properties of GaN materials, such as their greater breakdown voltage and wider bandgap. , GaN-based power transistors are widely used in power electronics applications. Such devices are appropriate for power converters, inverters, motor drives, and various other applications which require effective power conversion and high-power handling capacities because they have high power density, high efficiency, and high-frequency operation. In general, wide bandgap semiconductors are suitable for high power density applications, high operating voltage applications with low power consumption, and high RF output applications in wireless communications. , Meanwhile, GaN technology is projected to enter more applications such as data augmentation, medical imaging, cybersecurity as a result of its special qualities and performance advantages. GaN's unique features make it particularly important in specific applications where the benefits overcome the limitations and justify the usage of this advanced semiconductor material. , Restraint: Higher efficacy of alternative such as Silicon Carbide (SiC) for high-voltage semiconductor applications , Silicon Carbide (SiC) and Gallium Nitride (GaN) are high-performance wide-bandgap semiconductor materials that perform better than standard silicon (Si) in a variety of applications. The decision between Silicon Carbide (SiC) and Gallium Nitride (GaN) in terms of efficiency depends on the particular needs of the application. Due to their higher breakdown voltage capabilities, SiC devices are often better suited for high-voltage applications. SiC power components are suitable for grid-level applications, high-power inverters, and the infrastructure of the electrical grid because they can withstand greater voltages. However, GaN devices are generally employed in low- to medium-voltage applications, including consumer electronics, server power supply, and automotive systems. , Furthermore, GaN devices are often more expensive than SiC devices. GaN devices are more expensive because of the complex production process and the requirement for specific tools and materials. However, SiC devices benefit from economies of scale and a more developed supply chain, which can lead to cheaper production costs. Both technologies are still evolving, and modern research and development activities attempt to solve these problems and increase the performance, cost-effectiveness, and scalability of GaN devices. , Opportunity: Evolving renewable energy applications of GaN , Solar power is one of the fastest-growing solutions for residential and commercial customers, also essential for developing a sustainable future. The growing awareness of the relevance of solar energy has resulted in an increase in study in the field of solar energy harvesting. GaN technology allows for better power densities in renewable energy systems as they can handle higher voltages and currents. For applications like energy storage systems and electric vehicle chargers, where power electronics must be small and offer high power levels, a higher power density is essential. , GaN-based devices are superior in comparison to traditional silicon-based devices in several ways, making them suitable for use in a variety of renewable energy applications. GaN-based converters and inverters may operate at greater switching frequencies, lowering the size and weight of the power electronics and enhancing overall system efficiency. , Challenge: High material and fabrication costs , The raw material which is required for GaN manufacturing, such as gallium and nitrogen precursors, can be costly when compared to those material used in Si-based devices. GaN epitaxial layers are typically manufactured on silicon carbide (SiC) or sapphire substrates, which can increase the cost of the raw materials. The price of materials is also increased by the particular equipment and processes needed to create GaN epitaxial layers. , Additionally, GaN device fabrication is a relatively challenging procedure that often asks for specialized equipment like molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) systems. It costs significantly much to buy, operate, and maintain these systems. The entire cost of manufacturing GaN devices is increased by the fabrication process' complexity and the requirement for strict process control. , As manufacturing techniques get more advanced and volume production rises, the costs related to GaN technology continue to gradually drop over time. It is projected that the cost of GaN devices will decrease as material growth methods and production procedures continue to progress. , RF Gallium Nitride Market Ecosystem , Prominent companies in this market include well-established, financially stable providers of RF GaN devices. These companies have been operating in the market for several years and possess a diversified product portfolio, state-of-the-art technologies, and strong sales and marketing networks. Prominent companies in this market include Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), and STMicroelectronics N.V. (Switzerland). , By end use, the satellite communication segment is expected to grow with the highest CAGR from 2023 to 2028 , The RF gallium nitride market for satellite communication is expected to grow at the highest CAGR from 2023 to 2028. Satellite communication is a key enabler of high-speed data transmission, especially in remote and rural areas where there is no other infrastructure available. RF GaN devices are well-suited for satellite communication applications because they offer high power efficiency and bandwidth, which are essential for transmitting large amounts of data over long distances. Also, There are a number of new satellite constellations being developed, which will provide coverage and high data rates. RF GaN devices are essential for these new constellations, as they offer the power efficiency and reliability necessary to operate in space. These factors are expected to drive the market for satellite communication end use in the RF gallium nitride market. , By wafer size, the 200 and more segment is expected to grow with a higher CAGR during the forecast period. , 200 and more are expected to exhibit a higher CAGR in the RF gallium nitride market, by wafer size, from 2023 to 2028. The growth can be attributed to larger wafer sizes allowing for more dies to be produced per wafer, which can lead to significant cost savings. For instance, a 200mm wafer can produce up to 100 times more dies than a 6-inch wafer. This can lead to significant cost savings for RF GaN devices, as the cost of the wafer is a major factor in the overall cost of the device. Also, as the demand for RF GaN devices grows, the availability of materials for these devices is also increasing. This is leading to more 200mm and bigger wafer sizes becoming available, which is further driving the growth of this market segment. , In 2028, North America is projected to hold the highest CAGR of the overall RF gallium nitride market. , In 2028, North America is expected to witness the highest CAGR. The growth in this region can be attributed to the growing electric and hybrid electric vehicle market is also supporting this growth in North America. In the electric and hybrid electric vehicle market, RF GaN devices have revolutionized the whole electronics system. The use of RF GaN devices in such vehicles leads to smaller systems, thereby reducing the weight of the overall vehicle and aiding in battery management. The growth of gallium nitride is dominated by the US due to the presence of large number of key players in the country. WOLFSPEED, INC., ON Semiconductor Corporation, Coherent Corp, Qorvo, Inc., MACOM are a few of the players catering to the RF GaN market. , Recent Developments , In March 2023, Infineon Technologies AG acquired GaN Systems Inc (Canada)., a leader in Gallium Nitride (GaN) power transistors. This acquisition will accelerate the Infineon GaN roadmap and strengthen its leadership in power systems. , In February 2023, MACOM acquired OMMIC SAS (France), a supplier of epitaxial wafers, foundry services and MMICs. With this acquisition MACOM is focused on entering the European markets, expand their wafer production capability and extend our product offerings to higher millimeter-wave frequencies, which are all in line with our long-term strategy. , In March 2023, ON Semiconductor Corporation relocated the headquarter from Phoenix to Scottsdale, Arizona. With the relocation the company energy consumption will be reduced by 12.84 million kWh compared to its energy use in 2021, and thus positively impact the company's journey to its net-zero emissions by 2040 goal. , In April 2022, ROHM Co., Ltd. partnered with Delta Electronics, Inc. to develop and mass produce next-generation GaN (gallium nitride) power devices. With Delta’s power supply device development technology and with ROHM’s power development and manufacturing expertise developed 600V breakdown voltage GaN power devices optimized for a wide range of power supply systems. , KEY MARKET SEGMENTS, By Device Type , Introduction , Discrete RF Device , Integrated RF Device , By Wafer Size , Introduction , <200 mm , 200 and More , By End Use , Introduction , Telecom Infrastructure , Satellite Communication , Military and Defence , Others , By Geography , Introduction , North America , Recession Impact , US , Canada , Mexico , Europe , Recession Impact , Germany , UK , France , Rest of Europe , Asia Pacific , Recession Impact , China , Japan , South Korea , Rest of Asia Pacific , RoW , Recession Impact , Middle East & Africa , South America, KEY MARKET PLAYERS , Sumitomo Electric Device Innovations, Inc. , Qorvo, Inc. , WOLFSPEED, INC. , NXP Semiconductors , MACOM , Infineon Technologies AG , ROHM Co., Ltd. , Texas Instruments Incorporated , Toshiba Corporation , STMicroelectronics N.V. .

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RF Gallium Nitride Market

Product ID: UCMIG45K2068

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