GaN Power Device Market

GaN Power Device Market Size, Share, Growth Analysis, By Device(GaN Power Discrete Devices, GaN Power ICs), By Application(Consumer Electronics, IT & Telecommunication), By Region(North America, U.S.) - Industry Forecast 2024-2031


Report ID: UCMIG45N2079 | Region: Global | Published Date: Upcoming |
Pages: 165 | Tables: 55 | Figures: 60

Regional Analysis:

GaN Power Device Market is being analyzed by North America, Europe, Asia-Pacific (APAC), Latin America (LATAM), Middle East & Africa (MEA) regions. Key countries including the U.S., Canada, Germany, France, UK, Italy, Spain, China, India, Japan, Brazil, GCC Countries, and South Africa among others were analyzed considering various micro and macro trends.

GaN Power Device Market Attractiveness Analysis, By Region 2020-2028
AttractivenessAnalysis
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FAQs

The global market for GaN Power Device was estimated to be valued at US$ XX Mn in 2021.

The global GaN Power Device Market is estimated to grow at a CAGR of XX% by 2028.

The global GaN Power Device Market is segmented on the basis of Device, Application, Region.

Based on region, the global GaN Power Device Market is segmented into North America, Europe, Asia Pacific, Middle East & Africa and Latin America.

The key players operating in the global GaN Power Device Market are Efficient Power Conversion Corporation (EPC), Fujitsu Limited, GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation,, Fujitsu Limited, Infineon Technologies AG, Taiwan Semiconductor Manufacturing Company.

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GaN Power Device Market

Product ID: UCMIG45N2079

$5,300
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